| 摘要 |
<p>PURPOSE:To uniformize the element characteristics of a semiconductor device and to decrease the bonding instability with an insulation film, by providing an epitaxially grown single crystal layer having a highly precise thickness as an active layer. CONSTITUTION:An oxide film 3 is formed by the thermal oxidation on the whole surface of a first semiconductor substrate 2 in an SOI semiconductor base body 1 of a semiconductor device to a desired thickness, such that the substrate 2 is completely covered with the oxide film 3. A second semiconductor substrate4 is then bonded to the oxide film 3 on the substrate 2. These are heated in the atmosphere of oxygen while being contacted with each other under pressure, so that they are unified. The surface of the substrate 4 is mirror finished. A silicon single crystal layer 5 is formed to a desired thickness by the epitaxial growth on the surface of the substrate 4 thus finished. The surface of the SOI wafer provided with this crystal layer 5 is etched selectively up to the oxide film 3, and oxide films 6 and 7 are provided. An n<+> type region 9, an n type region 12 and a wiring pattern 13 are formed by the p-n junction diffusion and the burrying diffusion so as to provide a twin Schottky diode whose element characteristics are equalized.</p> |
