| 摘要 |
PURPOSE:To obtain an IC, which has high electrical reliability and operates at high speed, by interposing mask members to both side sections of a gate electrode for a MESFET and forming conductive layers while using the electrode and the members as masks and being made to correspond to source and drain regions. CONSTITUTION:Si, etc, are implanted to the surface layer section of a semi-insulating GaAs substrate 1 to form an N-type active region 2, source and drain regions are shaped in the region 2, a conductive layer consisting of the laminate of Ti, Pt and Au is applied onto the whole surface containing the source and drain regions, and a gate electrode 4 is left only under a photo-resist film 3 through anisotropic etching by using a mask composed of the film 3. A mask member 5 consisting of SiO2, Si3N4, etc. having etching rates different from the film 3 and the electrode 4 is applied onto the whole surface, and the mask member 5 is left only on the film 3 and the side surface of the electrode 4 as 5A through anisotropic etching in the same manner by employing the mask of a resist film 6 shaped to sections except the region 2 and others are removed. An Au-Ge conductive layer 7 is applied onto the whole surface, the films 3 and 6 are removed together with the layers 7 attached onto the films 3 and 6, and the layers 7 in which a short circuit is not generated are formed onto a source and a drain. |
