发明名称 |
Process for fabricating dielectrically isolated devices utilizing heating of the polycrystalline support layer to prevent substrate deformation |
摘要 |
The efficacy of dielectrically isolated device formation on a substrate is substantially enhanced through a specific set of processing steps. In particular, before silicon oxide regions, e.g., gate oxide regions, are produced, bulk polycrystalline areas are heat treated to substantially increase their polycrystalline silicon grain size.
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申请公布号 |
US4581814(A) |
申请公布日期 |
1986.04.15 |
申请号 |
US19840681270 |
申请日期 |
1984.12.13 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
CELLER, GEORGE K.;ROY, PRADIP K.;SCHIMMEL, DONALD G.;TRIMBLE, LEE E. |
分类号 |
H01L21/324;H01L21/762;(IPC1-7):H01L21/20;H01L21/76 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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