| 摘要 |
PURPOSE:To manufacture electrodes adapted for high density semiconductor devices by forming a window hole for connecting the electrodes opened at an insulating oxide film on the surface of an n type Si substrate, forming a primary film of a silicide film to coat the window hole, and forming electrode aluminum film thereon. CONSTITUTION:A p type diffused base layer 9 is formed by B ion implanting on the surface of an n<-> type Si substrate 8, an n<+> type diffused emitter layer 10 is formed by As ion implanting on part of the surface of the layer 9, and a window hole 12 is opened by contact photoetching at the produced surface oxide film 11. Then, W-Si is sputtered on the overall surface to form a silicide film 13, and the portion except the portion coated on the surface o the semiconductor region of the n<+> type emitter layer is removed. Subsequently, aluminum is sputtered on the overall surface, aluminum is etched by etching with a phosphoric acid to complete electrodes. At this time the silicide film to become the primary film is not etched with the fluoric acid or the phosphoric acid, and even if there is a 'hole' to the electrode, the semiconductor portion is not etched by the silicide film so that no junction breakdown occurs. |
