| 摘要 |
PURPOSE:To obtain a Schottky diode for an extra-high frequency mixer while completing selective epitaxial growth at a time by growing an epitaxial layer in a laminating shape onto a semi-insulating substrate, leaving only a region as an active layer in the epitaxial layer, removing others and selectively depositing a semi-insulating GaAs region only on the removing section. CONSTITUTION:N<+> type and N-type GaAs layers 2 and 3 are laminated on a Cr doped GaAs semi-insulating substrate 1 and grown in an epitaxial manner, a mask consisting of an SiO2 film 4 is shaped at a predetermined position on the layer 3, and active layers composed of the layers 2 and 3 are left only under the film 4 and others are removed through etching. A Cr doped semi- insulating GaAs layer 5 is deposited only on the removing section through selective epitaxial growth, the film 4 is removed, an SiO2 film 6 is applied onto the whole surface, a contact hole 7 is bored onto an active region, and a wiring 8 being in contact with the active layer is applied while being extended onto the film 6. One part of the active layer is exposed and a cathode electrode 9 is formed to the exposed section, and an anode electrode 10 is applied onto the wiring 8. |
