| 摘要 |
PURPOSE:To reduce the size and increase the density and the speed by a method wherein, after impurity ion implantation, a thin metallic layer is deposited before an insulation layer is deposited, and a metal-semiconductor compound layer is formed by making the react with the semiconductor of the source-drain region. CONSTITUTION:After removal of a photo resist layer 23, the heat treatment to activate the impurity ion-implanted to semiconductor regions 7' and 8' is carried out, thus forming N type semiconductor regions 7 and 8. Successively, the insulation layer 21 is removed by reactive sputter etching at the part other than the lower region of a stencil layer 22. Then, a metallic layer 41 made of Pt is deposited by electron beam evaporation. On heat treatment, the metal- semiconductor compound layers 42 and 43 made of Pt silicide are formed by making the semiconductor regions 7 and 8 react with the metallic layer 41 within the range of the thicknesses of the regions 7 and 8. Thereafter, the metallic layers 41 remaining on insulation layers 3 are removed. |
