| 摘要 |
PURPOSE:To make it possible to measure distribution of element concentration in the direction of the depth of a sample, by implanting the ions of a tracer element to a plurality of reference depth in a standard sample, thereby finding the absolute value of the analyzing depth. CONSTITUTION:Even if the surface shape of a sample to be measured is complicated or material of the sample is special and the calibration by a standard sample cannot be performed, the depth of analysis is to be calibrated by the distribution of the ranges of ion implantation. For this purpose, a tracer implanting system 23, which implants tracer ions, is added. The implanting system 23 is composed of a tracer-ion generating source 19, a taking-out electrode 20, a tracer-ion accelerating tube 21 and a tracer-ion-beam converging and deflecting device 22. The implanting system 23 is arranged on a probing-ion projecting system 17 in series so that the axis of the tracer ion beam agrees with the axis of the probing ions 1. An on gun 4 has a hollow structure so that the tracer ions can pass. When calibration is performed, the tracer ions are directly implanted into the sample to be measured 3. Then a sample holder 2 is rotated, and the probing ions are projected. Thus, calibration and micro-ion- analyzing of the sample 3 are carried out. |
