发明名称 |
PROCEDE POUR FABRIQUER DES CONTACTS SCHOTTKY |
摘要 |
Method of producing metal-semiconductor contacts (Schottky contacts) with precisely defined and preferably relatively small areas by uniformly coating a semiconductor surface with a layer of chromium, coating a layer of aluminum in a pattern corresponding to the desired contacts onto the chromium layer and etching the uncoated chromium layer areas with hydrochloric acid having a concentration of at least about 1 percent until corresponding areas of the semiconductor surface are exposed. The so-formed plurality of contacts on a semiconductor sample can be divided into individual components each having at least one such contact. Connection wires or the like are attachable directly to the aluminum area by thermo-compression or ultra-sonic bonding. |
申请公布号 |
BE775571(A1) |
申请公布日期 |
1972.03.16 |
申请号 |
BE19710775571 |
申请日期 |
1971.11.19 |
申请人 |
SIEMENS A.G., A BERLIN ET A MUNICH, (ALLEMAGNE), |
发明人 |
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分类号 |
H01L21/00;H01L23/482 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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