发明名称 SELF-BIAS CIRCUIT FOR SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To prevent the flowing of feedthrough currents approximately to a final-step inverter circuit, and to reduce power consumption by driving two MOS transistors for the final-step inverter circuit in a charge pump driving circuit so as not to be simultaneously brought to an ON state. CONSTITUTION:The overlapping time of output voltage c' from a third inverter circuit I3 and output voltage f' from a sixth inverter circuit I6 inputting while being each made to correspond to gates for transistors Q9, Q10 in a final-step inverter circuit I5 is extremely short (t1'-t2' time and t3'-t4' time). Output voltage c' from the third inverter circuit I3 inputted to the gate for the transistor Q9 in the final-step inverter circuit I5 is made smaller than the threshold voltage of the transistor Q9 for the overlapping time (t1'-t2' and t3'-t4'), thus approxi mately preventing the flowing of feedthrough currents through the final-step inverter circuit I5.
申请公布号 JPS6170745(A) 申请公布日期 1986.04.11
申请号 JP19840192172 申请日期 1984.09.13
申请人 TOSHIBA CORP 发明人 MIYAWAKI NAOKAZU;OGURA ISAO
分类号 H01L27/04;G05F3/20;H01L21/822 主分类号 H01L27/04
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