| 摘要 |
PURPOSE:To obtain a GaAs layer of high quality by cleaning the surface of a substrate of Si or Ge by high temperature treatment, then growing a thin GaAs buffer layer on the (100) substrate at a low temperature, and growing the GaAs layer to be obtained on the buffer layer. CONSTITUTION:To epitaxially grown a GaAs layer on the 100 surface of Si or Ge substrate, the substrate is heat treated under arsenic pressure by removing the surface oxide film of the substrate at temperature for obtaining clean substrate surface. A GaAs buffer layer of 200Angstrom or lower in thickness is grown at 450 deg.C or lower, and the GaAs layer is grown at the growing temperature of the normal GaAs layer. Thus, after high temperature treatment is performed and cleaned, a thin GaAs buffer layer is grown at low temperature, and a GaAs layer to be obtained is grown on the buffer layer at the growing temperature of the normal GaAs layer. Thus, the GaAs layer which has no oval defect and good crystallinity of sole domain can be obtained. |
