| 摘要 |
PURPOSE:To obtain a semiconductor element combining high speed properties and stable operation performance by inserting a diode between a base in a PNP transistor for an I<2>L and a ground. CONSTITUTION:A P type buried region 9 forms an anode for a diode inserted between a base in a lateral PNP transistor and a ground together with a deep P type diffusion region 11, and the region 9 is short-circuited by an N type epitaxial layer 3; in a base region in the PNP transistor and a conductive substance on a contact window 12. A collector 4 (a base in an inverted type NPN transistor) in the PNP transistor is divided into two by an oxide film isolation region 10, and these two divided shallow P type diffusion regions are short- circuited by a conductive substance 8. Accordingly, an I<2>L can be operated without saturating the PNP transistor, thus obtaining stable operation even when the current amplification factor of the inverted type NPN transistor is small. |
