| 摘要 |
PURPOSE:To form an accurate inverted resist pattern by coating the first resist pattern formed on a substrate with the second resist, emitting far ultraviolet ray, heat treating it, then removing the second resist on the first resist pattern, and then removing the first resist pattern. CONSTITUTION:A polymethylmethacrylate (PMMA)2 of positive type electron beam resist is coated on a silicon wafer 1, prebaked, and the pattern is exposed by an electron beam to form a pattern 3. Then, a polystyrene negative resist 4 is coated, prebaked, and the resist on the PMMA resist pattern is then removed by oxygen ashing. After far ultraviolet light is then emitted, it is baked, dipped in developer methylisobutylketone of the PMMA resist for 2min to remove the PMMA resist. Thus, higher resolution than the normal negative resist pattern can be obtained. |
