| 摘要 |
PURPOSE:To readily obtain an ultrafine pattern by ion implanting to a resist to become a mask in case of etching to improve the etching resistance and ion implanting to a thin film to be etched to increase the etching velocity, thereby deeply etching. CONSTITUTION:A pattern is formed on a resist film 5 by an electron beam exposure on the portion to become a pattern 4 to be removed in advance by etching, and anion beam 1 of Ga ions of 50-100kV is, for example, emitted to the entire surface of a sample. Since the invading depth to the sample becomes shorter as the ion is heavier, the etching depth becomes shallow. On the other hand, when the film 5 used as a mask is an organic polymer film of PMM or CMS, the durability to the plasma etching is improved by ion implanting. Accordingly, when this phenomenon is applied, thicker layer may be etched by using thinner resist film, thereby forming the pattern 4. |
