| 摘要 |
PURPOSE:To inhibit a solid state reaction between Si and Al due to heat treatment, and to obtain a low-resistance contacting surface between stable Al and polycrystalline silicon by forming a polycrystalline silicon layer onto a semiconductor substrate, doping arsenic and bringing a wiring layer by an Al film into contact with the polycrystalline silicon layer. CONSTITUTION:A semiconductor device is formed in such a manner that a thermal oxide film 2 is shaped onto an Si substrate 1 and polycrystalline silicon 3 is deposited in thickness of 4,000-5,000Angstrom by using a decompression CVD method, and the resistance of polycrystalline silicon 3 is lowered through treat ment at 1,000 deg.C in PH3 gas and by doping phosphorus (P) into said polycrystalline silicon 3. As ions are implanted into polycrystalline silicon 3 by the quantity of a dose of 5X10<15>/cm<2> and 40Kev acceleration energy, and annealed at 1,000 deg.C, and As is doped. An inter-layer insulating film 4 is shaped, a window for a contact is formed, and an Al or Al alloy film 5 in approximate ly 1mum film thickness is evaporated through a sputtering method. Polycrystalline silicon 3 and Al 5 are brought into ohmic-contact through sintering treatment at approximately 450-470 deg.C. |
