| 摘要 |
PURPOSE:To recrystallize a silicon film by forming an intermediate layer for absorbing a neodymium yag laser under an insulating film contacted with the silicon film to be recrystallized, thereby efficiently melting the film even by the laser beam having small light absorption rate. CONSTITUTION:A neodymium yag laser beam 1 is emitted to recrystallize a silicon film 2 by using a substrate of the structure that a germanium layer 5 is interposed between insulating films 3 and 6 on a silicon substrate 4. The germanium has 2X10<3>/cm or larger of light absorption rate for the oscillating wavelength (1.06mum) of the beam 1 and 958 deg.C of high melting point. Most of the beam 1 which is not absorbed to the film 2 but passed toward the film 6 is absorbed to the layer 5, so that the temperature of the germanium layer rises. When the layer 5 is heated, the temperature of the film 2 also rises to increase the light absorption coefficient for the beam 1. As a result, the film 2 can be melted with low power density. |
