| 摘要 |
PURPOSE:To form a metallic silicide in source-drain regions in the main surface of a semiconductor substrate or in the regions and onto a gate electrode with excellent controllability in predetermined film thickness even when there is oxygen in a heat treatment furnace by shaping an oxide film functioning as a protective film from oxygen onto a metallic film. CONSTITUTION:Heat treatment is conducted under the state in which a TiO2 film 30 serving as a protective film from oxygen is deposited onto a titanium film 29, thus oxidizing no titanium film 29, then forming titanium sllicide layers 311-313 on a gate electrode 25 and source-drain regions 26, 27. Consequently, a semiconductor device is controlled in prescribed film thickness, surface resis tance is reduced to approximately 1OMEGA/square, and the titanium silicide layers 311-313 having stable resistance values can be shaped with superior reproducibility. Accordingly, the surface resistance of the gate electrode consisting of polycrystalline silicon in 4,000Angstrom thickness extends over -20OMEGA/square at the most, thus reducing surface resistance by one figure or more, then attaining the speeding-up of an element. |
