发明名称 |
METHOD OF MAKING SEMICONDUCTOR DEVICES |
摘要 |
A method for making an IGFET is described. The method utilizes impurity ion implantation into the surface channel to determine the conductivity thereof. The advantages include special impurity profiles providing improved performance, better control over important parameters such as threshold voltage, the manufacture of improved tetrodes, and the manufacture of improved ICs using for example N- and P-channel devices, and depletion and enhancement devices combined in a single chip.
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申请公布号 |
US3653978(A) |
申请公布日期 |
1972.04.04 |
申请号 |
USD3653978 |
申请日期 |
1969.03.07 |
申请人 |
NORTH AMERICAN PHILIPS CO. INC. |
发明人 |
DAVID PHYTHIAN ROBINSON;JULIAN ROBERT ANTHONY BEALE;JOHN MARTIN SHANNON;JOHN ANTHONY KERR;MUKUNDA BEHARI DAS |
分类号 |
H01L21/265;H01L21/76;H01L21/8236;H01L21/8238;H01L27/088;H01L27/092;H01L29/00;H01L29/10;H01L29/78;(IPC1-7):H01L7/54 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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