| 发明名称 |
NEGATIVE-TYPE RESIST SENSITIVE TO IONIZING RADIATION |
| 摘要 |
A polyamide polymer having recurring units represented by the formula: <IMAGE> wherein R represents at least one divalent organic group, has excellent characteristics such as high sensitivity, high resolving power and excellent dry etching resistance suitable as a negative-type resist in ionizing radiation lithography. |
| 申请公布号 |
DE3269664(D1) |
申请公布日期 |
1986.04.10 |
| 申请号 |
DE19823269664 |
申请日期 |
1982.10.08 |
| 申请人 |
DAI NIPPON INSATSU KABUSHIKI KAISHA |
发明人 |
OGUCHI, KIYOSHI |
| 分类号 |
C08G69/00;C08G69/26;C08G73/06;C08L77/00;G03F7/038;(IPC1-7):G03F7/10 |
主分类号 |
C08G69/00 |
| 代理机构 |
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代理人 |
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