| 摘要 |
Disclosed is a process for forming resist patterns by coating on a substrate at least one selected from homopolymers of a monomer represented by the formula: <IMAGE> and copolymers of said monomer with other vinyl monomers, applying radiation to a desired portion thereof, and thereafter carrying out development treatment with use of a developer, which is characterized in that said developer is composed of one or more of ketones selected from the group consisting of 2-butanone, 2-methyl-3-butanone, 2-pentanone, 3-pentanone and 4-methyl-2-pentanone; or mixture thereof with other ketone and/or alcohol, except for a single use of 2-butanone and a combination of 4-methyl-2-pentanone and alcohol. |
