发明名称 |
Apparatus for production of compound semiconductor single crystal. |
摘要 |
<p>An apparatus for the production of a compound semiconductor single crystal comprises a high-pressure container (1), a crucible (2) and a crucible stand (3) disposed inside the high-pressure container (1), a heat generator (4) encircling the crucible and the crucible stand, a heat-insulating member (5) disposed outside the heat generator, and a crystal pulling device (6) disposed above the crucible (2) in such a manner as to be freely moved in a vertical direction. The crucible stand (3) and/or heat-insulating member (5) is formed of sintered pieces of poly-type aluminium nitride containing as a sintering aid at least one member selected from the oxides of the Group IIIa and IIa elements or sintered pieces of a aluminum nitride coated with said poly-type aluminium nitride. This apparatus permits production of a single crystal of larger size and higher quality than the conventional countertype, because the crucible stand (3) and the heat-insulating member (5) yield to much less deterioration due to oxidation and exhibit higher heat-insulating ability and the melt of raw material for crystal is minimally contaminated by the product of oxidation.</p> |
申请公布号 |
EP0177194(A2) |
申请公布日期 |
1986.04.09 |
申请号 |
EP19850306325 |
申请日期 |
1985.09.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOMEYA, KATSUTOSHI;TSUGE, AKIHIKO;NAKANISHI, MASAE;WATANABE, MASAYUKI;WASHIZUKA, SHIYOUICHI;YASKIRO, SADAO |
分类号 |
C30B15/10;C30B15/14;(IPC1-7):C30B15/10 |
主分类号 |
C30B15/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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