| 摘要 |
PURPOSE:To obtain a semiconductor storage device possible for simultaneous write/read and fast operating speed by constituting the device that a switch circuit of unit cell is constituted by plural switching transistors (Trs) connected to each bit line and a memory cell and driven by the word line and a voltage below the inversion of memory cell is applied. CONSTITUTION:Two kinds of each two switching Trs (TSW and TSR) connected to write only and read only word lines WW, WR, bit lines WB, RB and each memory cell MC and driven through each word line belong to one MC and each one precharge Trs TPW, TPR are provided to each bit line. The memory cell belonging to the same row selected via a write row selection circuit is read from another MC via a write/read selection circuit. In this case, the conductance of the switching and precharge Trs is set so as to apply a voltage below the MC inversion to the MC. |
