发明名称 IMPROVED NARROW BAND GAP AMORPHOUS ALLOY FOR PHOTOVOLTAIC POWER RELATION
摘要 <p>An optimized narrow band gap alloy which is especially useful in tandem photovoltaic devices is formed from germanium, tin and or lead and at least one density of states reducing element. The depositing species are activated in a UHV, contaminant-free environment and deposited to form a contaminant-free, substantially tetrahedrally co-ordinated alloy material with hydrid orbitals. Fluorine is preferably added to the alloy material to (1) reduce the density of state through compensation, and (2) promote and expand elements with which it bonds into tetrahedral co-ordinatior whereby heretofore unavailable orbitals may be utilized.</p>
申请公布号 JPS6169177(A) 申请公布日期 1986.04.09
申请号 JP19840151125 申请日期 1984.07.20
申请人 ENERGY CONVERSION DEVICES INC 发明人 OVSHINSKY STANFORD R
分类号 H01L31/04;H01L21/205;H01L31/075;H01L31/20 主分类号 H01L31/04
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