| 摘要 |
PURPOSE:To obtain one peak element by a far field pattern with excellent controllability by asymmetrically forming a current injection region in the left and the right to some line. CONSTITUTION:A clad layer 2, an active layer 3, a clad layer 4 and a cap layer 5 are grown on a substrate 1. A plurality of grooves are shaped in parallel on the growth layer side, and a buried layer 6 is formed by the grooved substrate. Differences are shaped in refractive indices in the lateral direction of the active layer 3 by the buried layer 6, and the refractive indices of filaments 9 are made higher than those of other sections 10. A whole-surface electrode 18 is formed on the substrate side of a wafer and a parallelogram electrode 17 on the growth side, and a surface orthogonal to a waveguide 9 is cloven and used as a resonator surface for a laser. Accordingly, a current injection region asymmetric in the left and the right to a line parallel with the filaments is shaped, thus obtaining an element having a single-peak far field pattern. |
