摘要 |
PURPOSE:To bring flexibility to the selection of material for the wiring pattern, which is annexed on the insulating film, by a method wherein a silanol solution is applied in the recessed parts, which are provided in the insulating film on the semiconductor substrate, the recessed parts are filled with a silicon oxide obtainable by performing a baking and the surface is flatly formed. CONSTITUTION:A first recessed part 3 with the smaller opening width and a second recessed part 4 with the larger opening width are provided in a first insulating film 2 on a silicon substrate 1. A second insulating film 5 is selectively provided across a distance W2 equivalent to the opening width W1 of the recessed part 3 from the inner walls 4a of the second recessed part 4. This second insulating film 5 is a conductive polycrystalline silicon film or an SiO2 film, which is formed by a CVD method. A silanol solution is applied in the recessed part 3 and intervals 6, and a baking is performed in an atmosphere of nitrogen. A silicon oxide 7 of the same film quality as that of the silicon oxide film formed by the CVD method can be annexed in the first recessed part 3 and the intervals 6, and as this silicon oxide is not an organic matter like a photo resist film, there is no possibility that this silicon oxide is deteriorated even though a high-temperature treating process is arranged somewhere from the following process. |