| 摘要 |
PURPOSE:To increase density and integrate the titled device on a large scale by using a plurality of P-N junctions, to which polycrystalline silicon thin-films bonded with the surface of an electric insulating substance coating a semiconductor substrate are formed, as diodes constituting a logic circuit. CONSTITUTION:An silicon nitride film 19 coating the surface of an silicon P type single crystal substrate 11 is removed selectively, and an N type impurity element having high density is introduced to a desired section. The insulating film 19 remaining on the surface is removed while leaving a resistance element and a protective section for a P-N junction in the insulating film 19 to expose the surface of a connector, a metallic thin-film is applied onto the whole surface of the surface of the substrate, a metallic silicide 24 is shaped onto the exposed surface through heat treatment, and the residual metallic thin-film is removed. An insulating film 25 is applied onto the surface, an opening reaching the metallic silicide is formed to a desired section, and a metallic film extending onto the insulating film 25 is shaped connected to the metallic silicide in the opening. Accordingly, the P-N junction formed to polycrystalline silicon is used as a diode for a logic circuit, thus largely improving the degree of integration. |
