发明名称 semiconductor memory device with increased adaptability.
摘要 <p>@ A semiconductor memory device having a PROM with an output register (170) has an initialize input terminal and a programmable initial data memory cell (23) for each bit. When an initialize input signal (INIT) is supplied to the initialize input terminal, the output register (170) is cleared or preset in accordance with the content of the initial data memory cell (23), whereby the reduction of adaptability caused by a drecrease in input terminals can be prevented, a circuit arrangement can be simplified, and a high degree of integratiob and high-speed operation can be achieved.</p>
申请公布号 EP0177395(A2) 申请公布日期 1986.04.09
申请号 EP19850401802 申请日期 1985.09.18
申请人 FUJITSU LIMITED 发明人 MIYAMURA, TAMIO;OHKAWA, TAKASHI FUJITSU DAI-2-NAKAHARA-RYO
分类号 G11C17/00;G06F1/24;G11C7/10;G11C7/20;G11C11/40;G11C17/14;(IPC1-7):G11C7/00 主分类号 G11C17/00
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