| 摘要 |
PURPOSE:To provide masks with absorbing effect equivalent to or exceeding that of Au as absorbing material by a method wherein, in a soft X-ray exposing process transferring fine semiconductor integrated circuit device, Si is substansilally utilized as mask patterns. CONSTITUTION:Silicon films 15 are selectively formed on masks 20 for soft X-ray on the surface of a substrate 11 comprising parison thin film as an organic thin film while the peripheral parts on the backside are formed of silicon materials 16 as the supporters supporting the masks 20. In such a construction, the absorbing power of masks 20 is equivalent to or exceeding that of Au especially in case X-ray wave length is around 50Angstrom -100Angstrom while the masks 20 are provided with absorbing effect equivalent to or exceeding that of Au utilized as conventional absorbing material. |
