| 摘要 |
PURPOSE:To enable the sufficient adhesive properties of an electrode even through heat treatment at a low temperature by forming the electrode through a plating method and shaping a thin oxide layer onto a semiconductor substrate on the formation of plating. CONSTITUTION:The surface of a p type single crystal as-sliced silicon substrate 100 is etched 102 in an anisotropic manner, and crushed layers on the cut-out of the substrate are removed. The aqueous solution of sodium hydroxide is introduced into a beaker and heated, and the silicon substrate 100 is admitted into the solution, and etched. An N<+> layer 104 is formed, and the N<+> layer shaped to the peripheral section of the silicon substrate is removed. Aluminum paste is formed onto the whole surface of the back, and Al atoms are diffused into the silicon substrate through baking to shape a P<+> layer 108 as an alloy layer. A resist film 110 and an oxide layer 117 are formed, and the thickness of the oxide layer is reduced through etching by a hydrofluoric acid aqueous solution, and layers 112 mainly comprising Ni are shaped on the surface and the back. Accordingly, conversion efficiency is improved, and adhesive properties are enhanced. |
