| 摘要 |
A bipolar emitter switching transistor in an emitter switched gate turn-off thyristor (GTO) arrangement has a controllable switching device coupled between the base of the emitter switching transistor and the anode of the GTO so that base current needed for the bipolar emitter switching transistor, to obtain a low collector-emitter voltage drop during transistor conduction, is derived from the load circuit, resulting in a greatly reduced base drive power supply requirement.
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