| 摘要 |
PURPOSE:To facilitate the manufacture and to prevent deterioration in the performance by forming a GaAs solar cell part on a Ge plane by a gas-phase growing method using an organic metal and incorporating a diode in a substrate. CONSTITUTION:A p type Si diffusion part 2 is formed on a lower plane of an n type Si substrate 1 and the substrate 1 and the diffusion part 2 composes a by-pass diode. A Ge layer 5 is formed on the substrate 1 and a p-n junction part 8 of a GaAs solar cell composed of an n type GaAs layer 6 and a p type GaAs layer is formed on the layer 5. A GaAlAs layer 10 is arranged on the layer 7. The junction part 8 and the layer 10 are formed by gas-phase growth using an organic metal which is effected at a relatively low temperature. Accordingly, the manufacture is easy and there is no possibility of deterioration of the performance even if the p-n junction is formed on the substrate by diffusion or the like. Also there is no need of externally attaching a diode for protection of a reverse voltage so that the lightening of the weight of an array can be contrived. Furthermore, by using a Ge substrate, the substrate 1 and the layer 5 can be unified. |
