发明名称 PURIFICATION OF GASEOUS HYDROGEN CONTAINING GASEOUS IMPURITY
摘要 <p>PURPOSE:To obtain gaseous H2 having high purity quickly and easily by allowing gaseous H2 contg. gaseous impurities to contact with hydrogen storage metal which has been activated and pulverized, and removing gaseous impurities by adsorbing selectively. CONSTITUTION:Hydrogen storage metal having increased surface area by activation and pulverization is packed in a gas occluding vessel 8 of a purification tower 1. The flow rate of a heating medium to be flowed into an external pipe 10 of the occluding vessel is controlled by a temp. controlling mechanism 14, thus, the gas occluding vessel 8 is held at a specified temp. The feed H2 gas contg. gaseous impurities is flowed through a pressure control valve 3, and filter 4 to the gas occluding vessel 8. The hydrogen storage metal occludes H2 gradually. When the adsorption of H2 reaches the saturated condition of adsorption, gaseous impurities alone are adsorbed selectively, and gaseous H2 passes through the gas occluding vessel without being adsorbed and discharged after passing through a filter 7 and a flow controlling valve 17. Residence time in the gas occluding vessel 8 is set by controlling with the flow rate controlling mechanism 6 and the flow controlling valve 17. By this constitution, gaseous impurities in the gaseous H2 is removed effectively.</p>
申请公布号 JPS6168303(A) 申请公布日期 1986.04.08
申请号 JP19840191120 申请日期 1984.09.12
申请人 IWATANI GAS KAIHATSU KENKYUSHO:KK;OSAKA SUISO KOGYO KK 发明人 NOMURA TAIO;HATTORI YOSHINOBU;TOYOMATSU NORIYUKI;WADA HIROSHI;YATABE MASARU
分类号 B01D53/14;C01B3/56 主分类号 B01D53/14
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