发明名称 Semiconductor switch having a disconnectible thyristor
摘要 A semiconductor switch has a disconnectible thyristor, a first switching transistor connected to a lead of the thyristor and a turn-off current path which emits a control electrode of the thyristor to a terminal of the lead. Given such semiconductor switches, the critical voltage rise rate dU/dt is increased for an inhibit voltage up to which an undesired ignition of the thyristor is reliably avoided. This is achieved by providing a second switching transistor having its switching path connected in the turn-off current path. Both switching transistors are conductive in the inhibiting condition of the thyristor and form a stabilizing emitter-base short.
申请公布号 US4581543(A) 申请公布日期 1986.04.08
申请号 US19830495640 申请日期 1983.05.18
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HERBERG, HELMUT
分类号 H01L29/10;H01L29/74;H01L29/745;H03K17/732;(IPC1-7):H03K17/72 主分类号 H01L29/10
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