发明名称 |
Semiconductor switch having a disconnectible thyristor |
摘要 |
A semiconductor switch has a disconnectible thyristor, a first switching transistor connected to a lead of the thyristor and a turn-off current path which emits a control electrode of the thyristor to a terminal of the lead. Given such semiconductor switches, the critical voltage rise rate dU/dt is increased for an inhibit voltage up to which an undesired ignition of the thyristor is reliably avoided. This is achieved by providing a second switching transistor having its switching path connected in the turn-off current path. Both switching transistors are conductive in the inhibiting condition of the thyristor and form a stabilizing emitter-base short.
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申请公布号 |
US4581543(A) |
申请公布日期 |
1986.04.08 |
申请号 |
US19830495640 |
申请日期 |
1983.05.18 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HERBERG, HELMUT |
分类号 |
H01L29/10;H01L29/74;H01L29/745;H03K17/732;(IPC1-7):H03K17/72 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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