| 摘要 |
PURPOSE:To clean a reaction container thoroughly and securely in a short time by a method wherein the gas feed-exhaust mechanism for gas for etching and the plasma discharge mechanism are provided in the reaction space, plasma is projected on the inner surface of the reaction container and an etching is performed. CONSTITUTION:Photochemical reaction is performed in a reaction space 5 just over a substrate 4, a pair of plate electrodes 6 and 6 are arranged in this space 5 opposing to each other and high-frequency voltage is impressed between the electrodes 6 and 6. An introducing hole 15, wherein gas G2 for etching to be chosen from among gasses of CF4, CClxF2, O2 and so forth is introduced, is provided behind the electrode 6 on one side of the electrodes and a gas feed- exhaust mechanism is formed of this introducing hole 15 and an exhaust hole 12. By this constitution, when the gas G2 is fed and high-frequency voltage is impressed between the electrodes 6 and 6, plasma is generated, the plasma is thoroughly projected on the inner surfaces of a reaction container 1 and a transmitting window 14 and the inner surfaces are securely cleansed. |
