| 摘要 |
<p>PURPOSE:To make a pattern fine and high density and to reduce the production cost by forming an X-ray transmitting film on a substrate to be dissolved and removed by specific material gas and then forming an X-ray interruption film which can be easily plasma etched on the surface of the X-ray transmission film. CONSTITUTION:The X-ray transmitting film mainly consisting of BxNxC1-x is formed on the substrate to be dissolved and removed by using N2 gas, diborane and hydrocarbon gas on the basis of plasma CVD and then the X-ray interruption film which consists of heavy metal mainly and can be easily plasma etched is formed on the X-ray transmitting film by evaporating the heavy metal simultaneously with the growth of a plasma polymerized film consisting of an organic gas monomer, so that a pattern of 2mum or less can be easily formed. Consequently, a superior masked substrate can be uniformly produced at a low cost.</p> |
