发明名称 HIGH-GAIN MOS INVERSIONAL AMPLIFIER
摘要 PURPOSE:To obtain an inversional amplifier in which the gain is extensively enlarged, by forming the amplifier by using three enhancement type FETs and three depression type FETs. CONSTITUTION:When the electric potential at a connecting point 5 rises, an action which increases the electric current of an FETD2 and another action which decreases the electric current simultaneously take place and the FETD2 supplies a constant electric current to another FETE2 irrespectively of the electric potential at the connecting point 5. When the electric potential at an input terminal 2 drops and the electric potential at an output terminal 3 rises under this condition, an action which decreases the drain current of an FETD1 and another action which increases the drain current simultaneously take place. As a result, the electric current flowing to the FETD1 becomes almost constant and the FETD1 becomes a load having a very high resistance component. Therefore, an inversional amplifier in which the gain is extensively enlarged can be obtained.
申请公布号 JPS6167305(A) 申请公布日期 1986.04.07
申请号 JP19840192052 申请日期 1984.09.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 IWADE SHUHEI
分类号 H03F3/34;H03F3/345;H03F3/347 主分类号 H03F3/34
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