| 摘要 |
PURPOSE:To provide a semiconductor device requiring no external bypass capacitor, by forming a metal film on one side of a die pad through an insulator thin film and by bonding a semiconductor element on this metal film. CONSTITUTION:An insulator thin film 6 is provided on one face of a die pad 2, and a metal film 7 is formed thereon. Further, a semiconductor element 1 is bonded on this metal film. One potential (e.g. +5V) of a power supply of the semiconductor element 1 is connected from a lead comb 3 to the substrate of the semiconductor element 1 through a bonding wire 4, whereby the metal film 7 is also maintained at that potential (+5V). The other potential (e.g. zero V) of the power supply is connected to the die pad 2, whereby a capacitor 8 is defined between the die pad 2 and the metal film 7. This capacitor can function as a bypass capacitor of the semiconductor element 1. |
