| 摘要 |
PURPOSE:To prevent a cover from peeling from a semiconductor wafer with an annealing treatment after a pattern formation by giving an exposure treatment to a perimeter portion where a semiconductor element of the semiconductor wafer is not formed. CONSTITUTION:An exposure treatment is given to a photoresist film 7 of a positive type with a mask 8. This exposure treatment is given for all the surface of a semiconductor wafer 1 and the light for an exposure is illuminated to a perimeter portion 2 of the semiconductor wafer 1 where a semiconductor element is not formed, and the resist film 7 is planed to sensitize on the perimeter portion 2 where a semiconductor element of the semiconductor wafer 1 is not formed. Therefore, a molybdenum silicide 7 is not only selectively etched on a semiconductor element forming region 4 is but also etched and eliminated perfectly on the perimeter portion 2 by photoetching. According to that, a fear that the molybdenum silicide film 6 is peeled by a stress generated in an annealing treatment is lessened. |
