| 摘要 |
PURPOSE:To reduce the size of a pyroelectric type infrared sensor and to improve its mass-productivity by ethcing an Si crystal chip and forming a recessed part, and storing a pyroelectric element in the recessed part. CONSTITUTION:The chip 28 formed of an Si crystal substrate has anisotropy in etching and is etched to form the recessed part 32 in the thickness direction without any radial etching. Further, an SiO2 film 30 and a conductor layer 25 are provided under the chip 28 and arranged on an element substrate 24. An interference film 29 through which infrared rays are transmitted is provided on the chip 28. Further, the pyroelectric element 22, amplifier 23, etc., are stored in the recessed part 32. Thus, the recessed part is formed in the chip by etching and the pyroelectric element is stored, so the device is reduced in size and the mass-production is facilitated. |
