发明名称 OXIDATION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To stabilize the quality by eliminating the variability in thickness of an oxide film by a method wherein a fixed amount of super pure water is reduced into vapor by means of ultrasonic waves, and this vapor is fed into a process tube with the carrier gas. CONSTITUTION:Super pure water controlled in flow rate with a microflowpump 6 is fed into an ultrasonic generator 5. The super pure water (c) is reduced into vapor by generating ultrasonic waves in the ultrasonic generator 5, and the vapor is transported into the process tube 1 with the carrier gas. In oxidation of wafers 4 in the process tube 1, water droplets generating by oversaturation are fed to the drain by opening and closing a valve 7.
申请公布号 JPS6165440(A) 申请公布日期 1986.04.04
申请号 JP19840188391 申请日期 1984.09.07
申请人 ROHM CO LTD 发明人 FUWA YASUHIRO
分类号 H01L21/31;H01L21/316;(IPC1-7):H01L21/316 主分类号 H01L21/31
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