PLANAR P-N JUNCTION WITH MESH FIELD ELECTRODE TO AVOID PINHOLE SHORTS

摘要

A planar p-n junction semiconductor device, wherein an electrode surrounding a p-n junction is provided on a protective film covering the surface of a higher resistivity region of two regions of different conductivity types which form a p-n junction, another electrode is provided in a lower resistivity region in ohmic contact therewith, said two electrodes being electrically connected, and the space charge region is extended and the breakdown voltage of the p-n junction is enhanced when a reverse bias is applied to the p-n junction.