| 摘要 |
PURPOSE:To eliminate effects on the semiconductor device by a method wherein a spinel layer and a magnesium oxide layer are successively formed over the whole surface of a sapphire substrate. CONSTITUTION:The spinel layer 3 and the magnesium oxide layer 2 are successively formed over the whole surface of the sapphire substrate 1. Then, the reducing reaction does not occur even when the substrate 1 is placed at high temperature. This eliminates the effects exerted on the semiconductor device. |
