| 摘要 |
PURPOSE:To enable the change of an implantation region into amorphous by a less quantity of ion implantation than in conventional methods by using a focused impurity ion beams. CONSTITUTION:The ion beams of impurity element are focused so as to make a diameter of the beam smaller than an area of an ion implantation region and the irradiated region is made amorphous by modulating a doze quantity of ions and/or a scanning speed. By using such method for implantation, the implantation region can be made amorphous by a small quantity of implantation. The change into single crystal can be made by a heat treatment at a low temperature of about 600 deg.C and activation can be done without diffusing impurities. Accordingly, it is possible to reduce the impurity doping region to a submicron region close to a cross-sectional area of the focused ion beam. |
