发明名称 MULTILAYER INTERCONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the generation of cracks by enabling the flattening of the surface by a method wherein an inorganic insulation film, an organic resin film with a smaller coefficient of thermal expansion than that of the (n+1)-th or n-th conductor layer, and an inorganic insulation film are successively laminated on the n-th conductor layer. CONSTITUTION:The multilayer interconnection structure consists of the n-th conductor layer 3, an insulation layer laminated on the n-th conductor layer 3, and the (n+1)-th conductor layer 7 laminated on the insulation layer. At that time, the insulation layer is made of the inorganic insulation film 6 laminated on the n-th conductor layer 3, organic resin film 5 with a smaller coefficient of thermal expansion than that of the (n+1)-th conductor layer 7 or the n-th conductor layer 3, and inorganic insulation film 6 laminated on the resin film 5. This construction enables the flattening of the surface and eliminates the generation of cracks.
申请公布号 JPS6165456(A) 申请公布日期 1986.04.04
申请号 JP19840186390 申请日期 1984.09.07
申请人 HITACHI LTD;HITACHI CHEM CO LTD 发明人 HIRAO MITSURU;NUMATA SHUNICHI;MOCHIZUKI YASUHIRO
分类号 H01L21/768;H01L21/312;H01L21/3205;H01L23/522 主分类号 H01L21/768
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