| 摘要 |
PURPOSE:To easily make mask alignment by making the first exposed insulation film as a reference, by a method wherein the width of the positioning pattern part is made larger than that for element isolation at the time of forming the first insulation film. CONSTITUTION:An insulation film is formed on the main surface of an Si substrate 1. At the time of forming apertures 3 by photoetching or the like, the width D2 of the insulation film 2A of the positioning pattern part is made larger than the width D1 of the insulation film 2 for element isolation. Thereby, even when the insulation film 2 is completely covered with a semiconductor layer 4 at the time of forming this layer 4, the insulation film 2A of the positioning pattern part is not covered but exposed in the front. Therefore, mask alignment can be easily made. |
