发明名称 ALIGNMENT MARK OF SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To apply resist uniformly over the wafer surface by making the resist in the neighborhood of marks interfere with each other by a method wherein alignment marks are formed by making a pair of L-shaped marks opposed to each other. CONSTITUTION:Indicator marks 11 and alignment marks 4 are formed on the surface of a wafer 1. Marks 4 are produced by arranging a pair of L-shaped marks in opposition to each other. Then, at the time of applying the resist 12 by spin coating, the actute parts of marks 2 and 3 come opposed to each other, and the resist in the neighborhood of the marks 2 and 3 is interfered with each other. Thereby, the resist 12 is applied uniformly over the surface of the wafer 1.</p>
申请公布号 JPS6142152(A) 申请公布日期 1986.02.28
申请号 JP19840162554 申请日期 1984.08.01
申请人 SANYO ELECTRIC CO LTD;TOKYO SANYO ELECTRIC CO LTD 发明人 ASANO TETSUO
分类号 H01L21/68;H01L21/02;H01L21/67;H01L23/522 主分类号 H01L21/68
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