发明名称 FIELD EFFECT SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To attain reduction in man-hour and to avoid complicated manufacture by setting easily an input operating voltage for each customer. CONSTITUTION:Load MOS transistors (TRs) QD1, QD2, QD3 with different gains and four drive MOSTRs QE1, QE2, QE3, QE4 having different gains are arranged on the input first stage of an internal circuit, a drain of one selected MOSTRQD2 among the load MOSTRs is connected to an output terminal VOUT, a source is connected to one terminal VCC of the power supply, the gate is connected to the source, drains of the selected two MOSTRs QE2, QE3 in the driven MOSTRs are connected to the output terminal VOUT, the gates are connected to the input terminal VIN and the source is connected to other terminal (common) of the power supply. Each W/L of the QD1-QD3, QE1-QE4 is changed to provided different gain gm so as to set lots of input operation voltages through combination.</p>
申请公布号 JPS6165624(A) 申请公布日期 1986.04.04
申请号 JP19840187605 申请日期 1984.09.07
申请人 NEC CORP 发明人 YONENAKA KAZUHISA
分类号 H01L21/8234;G06F15/78;H01L27/088;H01L29/78;H03K19/0944;H03K19/173 主分类号 H01L21/8234
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