| 摘要 |
PURPOSE:To eliminate effects on the characteristics of the semiconductor device by coating the whole surface of a sapphire substrate with a single crystal film of stabilized zirconia. CONSTITUTION:The whole surface of the sapphire substrate 1 is coated with a film 2 of stabilized zirconia which is an oxide single crystal. Then, the reduc ing reaction does not occur even when the substrate 1 is placed at high tempera ture. This eliminates the effects exerted on the characteristics of the semiconduc tor device. |
