| 摘要 |
PURPOSE:To accelerate the current by means of eliminating any unfavorable effect of poly Si gate electrode by a method wherein a PMOS side input terminal and an NMOS side input terminal of a CMOS transistor are connected to each other by an Al wiring on the second layer out of two layer wiring. CONSTITUTION:A CMOS inverter composed of a PMOS1 and an NMOS2 is provided with a common poly Si electrode 3. Input terminals 17, 18 are connected to the Si gate electrode 3 through the intermediary of contacts 15, 16. The input terminal 17 on the PMOS1 side and the other input terminal 18 on the NMOS2 side are connected to each other using an Al wiring 42 on the second layer through the intermediary of throughholes 40, 41. Through these procedures, the current may be accelerated because the operational speed may not be unbalanced by the positions of input besides the unfavorable effect of resistance 21 from the central part of NMOS1 to the border of NMOS1 and PMOS2 as well as that of resistance 22 from the border to the central part of PMOS2 is entirely eliminated. |
