| 摘要 |
PURPOSE:To obtain uniform output characteristics and dark output characteristics by surrounding respective photodiodes with a low-resistance part provided on or in a semiconductor base body and short-circuiting the low-resistance part and a voltage applied part. CONSTITUTION:The photodiode array sensor 1 consists of an array of plural photodiodes PD set by dividing and forming plural p type semiconductor areas 3 in the surface layer of an n type semiconductor base body 2, a readout switch part 5 composed of gate elements formed corresponding to respective PDs by utilizing part of the base body 2, a shift register part 6 composed of a plasma couple device formed by utilizing part of the base body 2, and the voltage applied part 8 provided at an edge part of the base body 2. Thus, the respective PDs are surrounded with the low-resistance part, which is short-circuited to the voltage applied part; an applied voltage is applied to all of the PDs uniformly and also applied to the switch part for reading signals out of the PDs uniformly to obtain uniform characteristics of the shift register, thereby reducing noises. |
