PROTECTION DIODE OF COMPOUND SEMICONDUCTOR DEVICE

摘要

PURPOSE:To markedly reduce the leakage in high frequencies by lessening return loss by a method wherein a diffused region of reverse conductivity type is formed in the surface of a semiconductor region located immediately under a bonding pad. CONSTITUTION:The diffused region P is formed on the surface of the semiconductor region 3 located immediately under a bonding pad 11 which has been connected to the first electrode 6. Such a construction enables the junction capacitance 22 between a semiconductor region 2 and the diffused region P and a resistor component 23 of the junction to be series-connected between an oxide film capacitor 20 formed under the bonding pad and a resistor component 21 such as the semiconductor region 2. Therefore, the resistor component as a whole increases, and the capacitance markedly reduces.